Technische Details STV160NF03LT4 ST
Description: MOSFET N-CH 30V 160A 10POWERSO, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: 10-PowerSO, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerSO-10 Exposed Bottom Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V.
Weitere Produktangebote STV160NF03LT4
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STV160NF03LT4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V 160A 10POWERSODrive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: 10-PowerSO Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerSO-10 Exposed Bottom Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V |
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