STV270N4F3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 270A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-PowerSO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 600+ | 6.45 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
600 Stücke
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Technische Details STV270N4F3 STMicroelectronics
Description: MOSFET N-CH 40V 270A 10POWERSO, Packaging: Tape & Reel (TR), Package / Case: PowerSO-10 Exposed Bottom Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 10-PowerSO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote STV270N4F3 nach Preis ab 7.25 EUR bis 10.69 EUR
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STV270N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 270A 10POWERSO Packaging: Cut Tape (CT) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 10-PowerSO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
auf Bestellung 1140 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STV270N4F3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 270A 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-PowerSO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 40V 270A 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-PowerSO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 1140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.69 EUR |
| 10+ | 8.96 EUR |
| 100+ | 7.25 EUR |