Technische Details STW150NF55 ST
Description: MOSFET N-CH 55V 120A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW150NF55
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| STW150NF55 | Hersteller : STM |
N-channel 55V - 0.005. - 120A - D2PAK/TO-220/TO-247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STW150NF55 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 55V 120A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STW150NF55 | Hersteller : STMicroelectronics |
MOSFETs N-Ch, 55V-0.005ohms 120A |
Produkt ist nicht verfügbar |


