Technische Details STW15NB50 ST
Description: MOSFET N-CH 500V 14.6A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW15NB50
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STW15NB50 | Hersteller : STM |
 MOSFET N-CH 500V 14.6A 0.33Om TO-247 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STW15NB50 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 14.6A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STW15NB50 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 500 Volt 14.6 A |
Produkt ist nicht verfügbar |