Technische Details STW15NB50 ST
Description: MOSFET N-CH 500V 14.6A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Weitere Produktangebote STW15NB50
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STW15NB50 | Hersteller : ST |
 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
STW15NB50 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 14.6A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
|
 |
STW15NB50 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 14.6A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
STW15NB50 | Hersteller : STMicroelectronics |
MOSFET N-Ch 500 Volt 14.6 A |
Produkt ist nicht verfügbar |