STW15NM60N

STW15NM60N STMicroelectronics


en.CD00156434.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details STW15NM60N STMicroelectronics

Description: MOSFET N-CH 600V 14A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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STW15NM60N STW15NM60N Hersteller : STMicroelectronics en.CD00156434-1220475.pdf MOSFET N Ch 600V 0.270 ohm 14A
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