STW19NM60N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Qualification: AEC-Q101
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Technische Details STW19NM60N STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 285mOhm @ 6.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote STW19NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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STW19NM60N | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) |
Produkt ist nicht verfügbar |
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| STW19NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8.2A; Idm: 52A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.2A Pulsed drain current: 52A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
