Technische Details STW200NF03 STM
Description: MOSFET N-CH 30V 120A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW200NF03
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STW200NF03 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 120A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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