STW21N150K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 1500 V, 0.7 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 packge
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.76 EUR |
| 10+ | 15.62 EUR |
| 100+ | 13.84 EUR |
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Technische Details STW21N150K5 STMicroelectronics
Description: STMICROELECTRONICS - STW21N150K5 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 14 A, 0.7 ohm, TO-247, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 1.5kV, rohsCompliant: YES, Dauer-Drainstrom Id: 14A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 446W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: MDmesh K5 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.7ohm.
Weitere Produktangebote STW21N150K5 nach Preis ab 14.68 EUR bis 43.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STW21N150K5 | STMicroelectronics |
Description: MOSFET N-CH 1500V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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STW21N150K5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STW21N150K5 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 14 A, 0.7 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 1.5kV rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 446W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: MDmesh K5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.7ohm |
auf Bestellung 1276 Stücke: Lieferzeit 14-21 Tag (e) |
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STW21N150K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 8.7A; 446W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 8.7A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STW21N150K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V
Description: MOSFET N-CH 1500V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.56 EUR |
| 30+ | 16.21 EUR |
| 120+ | 14.68 EUR |
| STW21N150K5 |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STW21N150K5 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 14 A, 0.7 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 1.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 446W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.7ohm
Description: STMICROELECTRONICS - STW21N150K5 - Leistungs-MOSFET, n-Kanal, 1.5 kV, 14 A, 0.7 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 1.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 446W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: MDmesh K5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.7ohm
auf Bestellung 1276 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 43.68 EUR |
| 8+ | 30.84 EUR |
| 10+ | 25.14 EUR |
| 50+ | 21.8 EUR |
| 100+ | 20.13 EUR |
| 250+ | 18.69 EUR |
| STW21N150K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 8.7A; 446W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8.7A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 8.7A; 446W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8.7A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)