STW21NM50N

Hersteller: STM
N-кан. MOSFET 550V, 18A, 0.15 Ом, 214Вт, TO-247 Транзистори

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 18A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V

Hersteller: STMicroelectronics
MOSFETs N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh