STW24NM60N STMicroelectronics
auf Bestellung 575 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.27 EUR |
| 10+ | 12.82 EUR |
| 100+ | 10.5 EUR |
| 250+ | 8.94 EUR |
| 600+ | 7.54 EUR |
| 1200+ | 7.51 EUR |
| 5400+ | 7.23 EUR |
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Technische Details STW24NM60N STMicroelectronics
Description: MOSFET N-CH 600V 17A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.
Weitere Produktangebote STW24NM60N nach Preis ab 10.04 EUR bis 14.79 EUR
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STW24NM60N | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 17A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 160 Stücke: Lieferzeit 21-28 Tag (e) |
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STW24NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW24NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW24NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: TO247 Gate-source voltage: ±30V On-state resistance: 168mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW24NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: TO247 Gate-source voltage: ±30V On-state resistance: 168mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |