Technische Details STW28NK60Z STM
Description: MOSFET N-CH 600V 27A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 150µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW28NK60Z
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| STW28NK60Z | STM |
 N-CHANNEL 600 V - 0.155. - 27A TO-247 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STW28NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 27A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.5V @ 150µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STW28NK60Z | STMicroelectronics |
MOSFET N-Ch 600 Volt 27 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW28NK60Z |
|
Hersteller: STM
N-CHANNEL 600 V - 0.155. - 27A TO-247 Транзистори
N-CHANNEL 600 V - 0.155. - 27A TO-247 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW28NK60Z |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 27A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 27A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STW28NK60Z |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 600 Volt 27 Amp
MOSFET N-Ch 600 Volt 27 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH