STW28NM60ND STMicroelectronics
auf Bestellung 288 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 8.71 EUR |
| 10+ | 8.11 EUR |
| 100+ | 8.09 EUR |
| 600+ | 8.06 EUR |
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Technische Details STW28NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 23A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V.
Weitere Produktangebote STW28NM60ND nach Preis ab 10.9 EUR bis 16.07 EUR
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STW28NM60ND | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 23A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V |
auf Bestellung 127 Stücke: Lieferzeit 21-28 Tag (e) |
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| STW28NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW28NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW28NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 14.5A; 190W Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.5A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |