STW33N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 600 V
| Anzahl | Preis |
|---|---|
| 2+ | 9.72 EUR |
| 10+ | 6.51 EUR |
| 100+ | 4.7 EUR |
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Technische Details STW33N60M6 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A, Type of transistor: N-MOSFET, Technology: MDmesh™ M6, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 15.8A, Pulsed drain current: 78A, Case: TO247, On-state resistance: 0.125Ω, Mounting: THT, Gate charge: 33.4nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote STW33N60M6 nach Preis ab 4.1 EUR bis 9.84 EUR
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STW33N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package |
auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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STW33N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 15.8A; Idm: 78A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15.8A Pulsed drain current: 78A Case: TO247 On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
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