STW34N65M5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 12.14 EUR |
| 25+ | 7.44 EUR |
| 100+ | 6.34 EUR |
| 250+ | 5.9 EUR |
| 600+ | 5.1 EUR |
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Technische Details STW34N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Weitere Produktangebote STW34N65M5
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STW34N65M5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 28A TO247Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
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STW34N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 17.7A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.7A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V |
Produkt ist nicht verfügbar |