STW37N60DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFET
auf Bestellung 600 Stücke:
Lieferzeit 706-720 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.83 EUR |
| 10+ | 13.57 EUR |
| 100+ | 11.31 EUR |
| 600+ | 9.98 EUR |
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Technische Details STW37N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STW37N60DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW37N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A Automotive 3-Pin(3+Tab) TO-247 Tube |
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| STW37N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 28A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
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| STW37N60DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Pulsed drain current: 112A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 94mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STW37N60DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 28A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STW37N60DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 112A; 210W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Pulsed drain current: 112A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 94mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |