STW55NM50N
Hersteller: auf Bestellung 1080 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STW55NM50N
Description: MOSFET N-CH 500V 54A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V.
Weitere Produktangebote STW55NM50N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW55NM50N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 54A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW55NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 54A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V |
Produkt ist nicht verfügbar |
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STW55NM50N | Hersteller : STMicroelectronics |
MOSFET N-channel 500V, 54 A Power II Mdmesh |
Produkt ist nicht verfügbar |