STW69N65M5-4 STMicroelectronics

Description: MOSFET N-CH 650V 58A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.