auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 26.68 EUR |
| 10+ | 24.26 EUR |
| 25+ | 21.61 EUR |
| 50+ | 21.58 EUR |
| 100+ | 20.33 EUR |
| 250+ | 18.46 EUR |
| 600+ | 16.9 EUR |
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Technische Details STW69N65M5-4 STMicroelectronics
Description: MOSFET N-CH 650V 58A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V.
Weitere Produktangebote STW69N65M5-4 nach Preis ab 23.2 EUR bis 30.45 EUR
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STW69N65M5-4 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 58A TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V |
auf Bestellung 395 Stücke: Lieferzeit 21-28 Tag (e) |
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STW69N65M5-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 58A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW69N65M5-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 58A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW69N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 36.5A Pulsed drain current: 232A Power dissipation: 330W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW69N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 36.5A Pulsed drain current: 232A Power dissipation: 330W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |