STW75N60DM6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.6 EUR |
| 10+ | 13.91 EUR |
| 100+ | 11.41 EUR |
| 600+ | 10.41 EUR |
| 1200+ | 9.47 EUR |
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Technische Details STW75N60DM6 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 45A, Pulsed drain current: 240A, Power dissipation: 446W, Case: TO247, Gate-source voltage: ±25V, On-state resistance: 32mΩ, Mounting: THT, Gate charge: 117nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote STW75N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STW75N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 72A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Supplier Device Package: TO-247-3 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW75N60DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW75N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH