STW75NF20

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO247
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Power dissipation: 190W
Technology: STripFET™

Hersteller: STMicroelectronics
MOSFETs Low charge STripFET

Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STW75NF20 - Leistungs-MOSFET, n-Kanal, 200 V, 37 A, 0.028 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 190W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.028ohm