Technische Details STW77N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 69A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 34.5A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 100 V.
Weitere Produktangebote STW77N65M5 nach Preis ab 13.07 EUR bis 35.75 EUR
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STW77N65M5 | STMicroelectronics |
 Trans MOSFET N-CH Si 650V 69A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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STW77N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 69A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 34.5A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 100 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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STW77N65M5 | STMicroelectronics |
MOSFETs N-channel 650 V 0.033ohm 69A Mdmesh |
auf Bestellung 506 Stücke: Lieferzeit 10-14 Tag (e) |
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STW77N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 41.5A Power dissipation: 400W Case: TO247 Gate-source voltage: ±25V On-state resistance: 33mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW77N65M5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 69A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 650V 69A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 420+ | 13.07 EUR |
| STW77N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 34.5A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 100 V
Description: MOSFET N-CH 650V 69A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 34.5A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 100 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.01 EUR |
| 30+ | 16.05 EUR |
| 120+ | 13.87 EUR |
| STW77N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V 0.033ohm 69A Mdmesh
MOSFETs N-channel 650 V 0.033ohm 69A Mdmesh
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.33 EUR |
| 10+ | 16.24 EUR |
| 100+ | 15.19 EUR |
| STW77N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |