STW9N150 STMicroelectronics
auf Bestellung 470 Stücke:
Lieferzeit 196-210 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 29.22 EUR |
| 10+ | 26.86 EUR |
| 100+ | 22.7 EUR |
| 600+ | 20.2 EUR |
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Technische Details STW9N150 STMicroelectronics
Description: MOSFET N-CH 1500V 8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V.
Weitere Produktangebote STW9N150
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW9N150 Produktcode: 126543 |
 Transistoren > MOSFET N-CH |
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STW9N150 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 8A 3-Pin(3+Tab) TO-247 Tube |
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STW9N150 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW9N150 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.5KV 8A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW9N150 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247 Mounting: THT Power dissipation: 320W Polarisation: unipolar Technology: PowerMesh™ Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.5kV Type of transistor: N-MOSFET Kind of package: tube Case: TO247 On-state resistance: 2.5Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW9N150 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1500V 8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW9N150 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247 Mounting: THT Power dissipation: 320W Polarisation: unipolar Technology: PowerMesh™ Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.5kV Type of transistor: N-MOSFET Kind of package: tube Case: TO247 On-state resistance: 2.5Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |