STW9N80K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CHANNEL 800V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.96 EUR |
| 10+ | 4.18 EUR |
| 100+ | 3.38 EUR |
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Technische Details STW9N80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 7A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V.
Weitere Produktangebote STW9N80K5 nach Preis ab 2.46 EUR bis 5.05 EUR
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STW9N80K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 800 V, 0.73 Ohm typ 7 A MDmesh K5 Power MOSFET |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW9N80K5 | Hersteller : STMicroelectronics |
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| STW9N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-247 Tube |
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| STW9N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 28A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| STW9N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 28A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |