STW9NK95Z

Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 7A 3-Pin(3+Tab) TO-247 Tube

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.41A
Pulsed drain current: 28A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: STMicroelectronics
MOSFETs N-channel 950 V, 1.15 Ohm typ 7 A SuperMESH Power MOSFET

Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STW9NK95Z - Leistungs-MOSFET, n-Kanal, 950 V, 7 A, 1.15 ohm, TO-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 950V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.75V
euEccn: NLR
Verlustleistung: 160W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperMESH Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.15ohm
SVHC: No SVHC (25-Jun-2025)