STWA40N60M2 STMicroelectronics
auf Bestellung 11 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 16.28 EUR |
10+ | 13.65 EUR |
25+ | 12.64 EUR |
100+ | 10.4 EUR |
250+ | 10.22 EUR |
600+ | 9.2 EUR |
1200+ | 7.44 EUR |
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Technische Details STWA40N60M2 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A, Type of transistor: N-MOSFET, Technology: MDmesh™ M2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 22A, Pulsed drain current: 136A, Power dissipation: 250W, Case: TO247, Gate-source voltage: ±25V, On-state resistance: 88mΩ, Mounting: THT, Gate charge: 57nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STWA40N60M2 nach Preis ab 6.29 EUR bis 10.42 EUR
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STWA40N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 34A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Supplier Device Package: TO-247 Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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STWA40N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 136A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA40N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 136A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |