STWA45N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
auf Bestellung 339 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 20.25 EUR |
| 10+ | 17.36 EUR |
| 100+ | 14.46 EUR |
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Technische Details STWA45N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V.
Weitere Produktangebote STWA45N65M5 nach Preis ab 11.18 EUR bis 20.64 EUR
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STWA45N65M5 | Hersteller : STMicroelectronics |
MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) |
auf Bestellung 651 Stücke: Lieferzeit 14-28 Tag (e) |
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| STWA45N65M5 | Hersteller : STMicroelectronics |
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auf Bestellung 596 Stücke: Lieferzeit 21-28 Tag (e) |
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| STWA45N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| STWA45N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |