STWA46N65DM6AG STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 650V 50A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
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Technische Details STWA46N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V, Power Dissipation (Max): 391W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3344 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STWA46N65DM6AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 391W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247 Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3344 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STWA46N65DM6AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 650 V, 55 mOhm typ., 50 A MDmesh DM6 Power MOSFET |
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