STWA48N60M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11.21 EUR |
| 10+ | 9.61 EUR |
| 100+ | 8.01 EUR |
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Technische Details STWA48N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V.
Weitere Produktangebote STWA48N60M2 nach Preis ab 6.18 EUR bis 11.4 EUR
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STWA48N60M2 | Hersteller : STMicroelectronics |
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auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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STWA48N60M2 | Hersteller : STMicroelectronics |
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STWA48N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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STWA48N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |