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STWA48N60M6

STWA48N60M6 STMicroelectronics

stwa48n60m6.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET
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Technische Details STWA48N60M6 STMicroelectronics

Description: MOSFET N-CH 600V 39A TO247, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V.

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STWA48N60M6 STWA48N60M6 STMicroelectronics stwa48n60m6.pdf Description: MOSFET N-CH 600V 39A TO247
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 600 Stücke
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STWA48N60M6 STMicroelectronics stwa48n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STWA48N60M6 stwa48n60m6.pdf
STWA48N60M6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STWA48N60M6 stwa48n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH