STWA60N035M9 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
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Technische Details STWA60N035M9 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 600V; 39A; Idm: 250A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 39A, Power dissipation: 321W, Case: TO247, Gate-source voltage: 30V, On-state resistance: 35mΩ, Mounting: THT, Gate charge: 112nC, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 250A, Technology: MDmesh™ M9.
Weitere Produktangebote STWA60N035M9
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STWA60N035M9 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 600V; 39A; Idm: 250A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 321W Case: TO247 Gate-source voltage: 30V On-state resistance: 35mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 250A Technology: MDmesh™ M9 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STWA60N035M9 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 600V; 39A; Idm: 250A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 321W
Case: TO247
Gate-source voltage: 30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 250A
Technology: MDmesh™ M9
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 600V; 39A; Idm: 250A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 321W
Case: TO247
Gate-source voltage: 30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 250A
Technology: MDmesh™ M9
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH