STWA65N045M9 STMicroelectronics

Description: N-CHANNEL 650 V, 39 MOHM TYP., 5, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.