STWA67N60DM6 STMicroelectronics
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Technische Details STWA67N60DM6 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 23.5A, 10V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V.
Weitere Produktangebote STWA67N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STWA67N60DM6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STWA67N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 37A; Idm: 190A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 190A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA67N60DM6 | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 23.5A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247 Long Leads Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STWA67N60DM6 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 45 mOhm typ 58 A MDmesh DM6 Power MOSFET |
Produkt ist nicht verfügbar |
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| STWA67N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 37A; Idm: 190A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 190A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |