STWA67N60M6

STWA67N60M6 STMicroelectronics


stwa67n60m6.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.59 EUR
10+ 12.5 EUR
100+ 10.41 EUR
600+ 9.19 EUR
Mindestbestellmenge: 2
Produktrezensionen
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Technische Details STWA67N60M6 STMicroelectronics

Description: MOSFET N-CH 600V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V.

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STWA67N60M6 STWA67N60M6 Hersteller : STMicroelectronics stwa67n60m6.pdf Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
STWA67N60M6 Hersteller : STMicroelectronics stwa67n60m6.pdf Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
STWA67N60M6 Hersteller : STMicroelectronics stwa67n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA67N60M6 Hersteller : STMicroelectronics stwa67n60m6-1826658.pdf MOSFET N-channel 600 V, 45 mOhm typ 52 A MDmesh M6 Power MOSFET
Produkt ist nicht verfügbar
STWA67N60M6 Hersteller : STMicroelectronics stwa67n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar