STWA67N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.55 EUR |
| 10+ | 12.07 EUR |
| 100+ | 8.96 EUR |
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Technische Details STWA67N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STWA67N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STWA67N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| STWA67N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 200A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STWA67N60M6 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long lead
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STWA67N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH