STWA67N60M6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.75 EUR |
| 10+ | 10.14 EUR |
| 100+ | 7.53 EUR |
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Technische Details STWA67N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V.
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STWA67N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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| STWA67N60M6 | Hersteller : STMicroelectronics |
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| STWA67N60M6 | Hersteller : STMicroelectronics |
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