STWA75N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 16.86 EUR |
| 30+ | 10.02 EUR |
| 120+ | 8.52 EUR |
| 510+ | 7.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STWA75N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 72A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V.
Weitere Produktangebote STWA75N60M6 nach Preis ab 8.54 EUR bis 17.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STWA75N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO-247 long lead |
auf Bestellung 478 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
STWA75N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |