SUD35N05-26L-E3
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Technische Details SUD35N05-26L-E3
Description: MOSFET N-CH 55V 35A TO252, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 7.5W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V.
Weitere Produktangebote SUD35N05-26L-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SUD35N05-26L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 35A TO252 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 55 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SUD35N05-26L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 35A TO252 Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SUD35N05-26L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 35A TO252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET N-CH 55V 35A TO252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUD35N05-26L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 35A TO252
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 35A TO252
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH