SUD50N03-06AP-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.01 EUR |
Produktrezensionen
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Technische Details SUD50N03-06AP-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Power Dissipation (Max): 10W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V.
Weitere Produktangebote SUD50N03-06AP-E3 nach Preis ab 1.09 EUR bis 3.68 EUR
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SUD50N03-06AP-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 90A 83W |
auf Bestellung 2851 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50N03-06AP-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
auf Bestellung 2861 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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SUD50N03-06AP-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SUD50N03-06AP-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SUD50N03-06AP-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SUD50N03-06AP-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 100A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SUD50N03-06AP-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 100A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 100A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |