SUD50P04-09L-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.76 EUR |
Produktrezensionen
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Technische Details SUD50P04-09L-E3 Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V.
Weitere Produktangebote SUD50P04-09L-E3 nach Preis ab 1.83 EUR bis 5.51 EUR
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SUD50P04-09L-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V 50A 136W 9.4mohm @ 10V |
auf Bestellung 4840 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50P04-09L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
auf Bestellung 12804 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD50P04-09L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUD50P04-09L-E3 - MOSFET, P CHANNEL, -40V, -50A, TO-252-3 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm directShipCharge: 25 |
auf Bestellung 3401 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD50P04-09L-E3 Produktcode: 167710
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