SUM70030M-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 2.63 EUR |
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Technische Details SUM70030M-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).
Weitere Produktangebote SUM70030M-GE3 nach Preis ab 3.41 EUR bis 8.68 EUR
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SUM70030M-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 150A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V |
auf Bestellung 920 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030M-GE3 | Vishay / Siliconix |
MOSFETs TO263 100V 150A N-CH MOSFET |
auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUM70030M-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
auf Bestellung 920 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.11 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.41 EUR |
| SUM70030M-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs TO263 100V 150A N-CH MOSFET
MOSFETs TO263 100V 150A N-CH MOSFET
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.68 EUR |
| 10+ | 5.79 EUR |
| 100+ | 4.14 EUR |
| 500+ | 3.47 EUR |