SUM70040E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
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Technische Details SUM70040E-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V.
Weitere Produktangebote SUM70040E-GE3 nach Preis ab 2.41 EUR bis 6.55 EUR
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SUM70040E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of channel: enhancement Technology: TrenchFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 76nC On-state resistance: 4mΩ Power dissipation: 125W Gate-source voltage: ±20V Drain current: 120A Drain-source voltage: 100V Kind of package: reel; tape |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V |
auf Bestellung 1149 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70040E-GE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs D2PAK (TO-263) |
auf Bestellung 1713 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUM70040E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; 125W
Mounting: SMD
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
On-state resistance: 4mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 100V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; 125W
Mounting: SMD
Case: D2PAK; TO263
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
On-state resistance: 4mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 100V
Kind of package: reel; tape
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.03 EUR |
| 23+ | 3.13 EUR |
| 28+ | 2.57 EUR |
| 29+ | 2.52 EUR |
| SUM70040E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
auf Bestellung 1149 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.14 EUR |
| 10+ | 4.04 EUR |
| 100+ | 2.84 EUR |
| SUM70040E-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs D2PAK (TO-263)
MOSFETs 100V Vds 20V Vgs D2PAK (TO-263)
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.41 EUR |