SUM90P10-19L-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details SUM90P10-19L-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 90A TO263, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 13.6W (Ta), 375W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote SUM90P10-19L-E3 nach Preis ab 4.5 EUR bis 10.7 EUR
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SUM90P10-19L-E3 | Vishay Semiconductors |
MOSFETs 100V 90A 375W 19mohm @ 10V |
auf Bestellung 7278 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90P10-19L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 90A TO263 Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 7711 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90P10-19L-E3 | Siliconix |
Transistor P-Channel MOSFET; 100V; 20V; 21mOhm; 90A; 375W; -55°C ~ 175°C; SUM90P10-19L-E3 TSUM90P10-19l Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| SUM90P10-19L-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 100V 90A 375W 19mohm @ 10V
MOSFETs 100V 90A 375W 19mohm @ 10V
auf Bestellung 7278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.85 EUR |
| 10+ | 5.34 EUR |
| 100+ | 4.65 EUR |
| 500+ | 4.63 EUR |
| 800+ | 4.5 EUR |
| SUM90P10-19L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 100V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 7711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.76 EUR |
| 10+ | 6.5 EUR |
| 100+ | 4.65 EUR |
| SUM90P10-19L-E3 |
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Hersteller: Siliconix
Transistor P-Channel MOSFET; 100V; 20V; 21mOhm; 90A; 375W; -55°C ~ 175°C; SUM90P10-19L-E3 TSUM90P10-19l
Anzahl je Verpackung: 5 Stücke
Transistor P-Channel MOSFET; 100V; 20V; 21mOhm; 90A; 375W; -55°C ~ 175°C; SUM90P10-19L-E3 TSUM90P10-19l
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 10.7 EUR |