| Anzahl | Preis |
|---|---|
| 55+ | 2.7 EUR |
| 63+ | 2.28 EUR |
| 68+ | 2.03 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.57 EUR |
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Technische Details SUP40012EL-GE3 Vishay
Description: MOSFET N-CH 40V 150A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote SUP40012EL-GE3 nach Preis ab 1.75 EUR bis 5.17 EUR
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SUP40012EL-GE3 | Vishay |
 Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP40012EL-GE3 | Vishay / Siliconix |
MOSFETs 40V Vds +/-20V Vgs TO-220AB |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP40012EL-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 150A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SUP40012EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 55+ | 2.73 EUR |
| 63+ | 2.35 EUR |
| 68+ | 2.12 EUR |
| 100+ | 1.97 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.76 EUR |
| SUP40012EL-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 40V Vds +/-20V Vgs TO-220AB
MOSFETs 40V Vds +/-20V Vgs TO-220AB
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.96 EUR |
| 10+ | 2.52 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.75 EUR |
| SUP40012EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 150A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.17 EUR |
| 50+ | 2.58 EUR |
| 100+ | 2.32 EUR |