Weitere Produktangebote SUP50010E-GE3 nach Preis ab 6.54 EUR bis 9.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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SUP50010E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 150A TO220ABDrain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP50010E-GE3 | Vishay |
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
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SUP50010E-GE3 | Vishay |
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SUP50010E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO220AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Description: MOSFET N-CH 60V 150A TO220AB
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.54 EUR |
| SUP50010E-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| SUP50010E-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)