Technische Details SUP75N03-04-E3
Description: MOSFET N-CH 30V 75A TO220AB, Packaging: Bulk, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 187W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote SUP75N03-04-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SUP75N03-04-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 75A TO220ABPackaging: Bulk Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
SUP75N03-04-E3 | Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SUP75N03-04-E3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 10742 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUP75N03-04-E3 |
![]() |
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3
MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



