Weitere Produktangebote SUP90330E-GE3 Vishay Siliconix мосфет nach Preis ab 1.48 EUR bis 4.38 EUR
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SUP90330E-GE3 | Vishay / Siliconix |
 MOSFETs 200V Vds 20V Vgs TO-220AB |
auf Bestellung 711 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP90330E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 35.8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V |
auf Bestellung 1160 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUP90330E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 200V Vds 20V Vgs TO-220AB
MOSFETs 200V Vds 20V Vgs TO-220AB
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.25 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| SUP90330E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Description: MOSFET N-CH 200V 35.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
auf Bestellung 1160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.38 EUR |
| 10+ | 2.82 EUR |
| 50+ | 2.13 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.52 EUR |