Technische Details SURHD8560W1T4G ON Semiconductor
Description: DIODE GEN PURP 600V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote SURHD8560W1T4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SURHD8560W1T4G | Hersteller : ON Semiconductor |
auf Bestellung 2430 Stücke: Lieferzeit 21-28 Tag (e) |
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SURHD8560W1T4G | Hersteller : onsemi |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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