SVD14N03RT4G onsemi

Description: MOSFET N-CH 25V 2.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Last Time Buy, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).