T3160N18TOFVTXPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SCR MODULE 1800V 7000A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1140.34 EUR |
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Technische Details T3160N18TOFVTXPSA1 Infineon Technologies
Description: SCR MODULE 1800V 7000A DO200AE, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 125°C, Structure: Single, Current - Hold (Ih) (Max): 300 mA, Current - Gate Trigger (Igt) (Max): 250 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz, Number of SCRs, Diodes: 1 SCR, Current - On State (It (AV)) (Max): 3160 A, Voltage - Gate Trigger (Vgt) (Max): 2.5 V, Part Status: Active, Current - On State (It (RMS)) (Max): 7000 A, Voltage - Off State: 1.8 kV.
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Category: Button thyristors Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA Max. off-state voltage: 1.8kV Load current: 3.16kA Max. load current: 7kA Case: BG-T11126K-1 Max. forward impulse current: 63kA Gate current: 250mA Mounting: Press-Pack Kind of package: in-tray Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: hockey-puck |
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