Technische Details TAN250A
Description: RF TRANS NPN 60V 1.215GHZ 55AW, Packaging: Bulk, Package / Case: 55AW, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 6.2db ~ 7dB, Power - Max: 575W, Current - Collector (Ic) (Max): 30A, Voltage - Collector Emitter Breakdown (Max): 60V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V, Frequency - Transition: 960MHz ~ 1.215GHz, Supplier Device Package: 55AW.
Weitere Produktangebote TAN250A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TAN250A | Hersteller : Microsemi | RF Bipolar Transistors Bipolar/LDMOS Transistor |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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TAN250A | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 60V 1.215GHZ 55AW Packaging: Bulk Package / Case: 55AW Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6.2db ~ 7dB Power - Max: 575W Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 960MHz ~ 1.215GHz Supplier Device Package: 55AW |
Produkt ist nicht verfügbar |