TB10S-G Comchip Technology

Description: BRIDGE RECT 1P 1KV 800MA 4TBS, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA, Current - Average Rectified (Io): 800 mA, Voltage - Peak Reverse (Max): 1 kV, Part Status: Obsolete, Supplier Device Package: TBS, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Surface Mount, Package / Case: 4-SMD, Gull Wing, Packaging: Tape & Reel (TR).