TB8S-G Comchip Technology
Hersteller: Comchip Technology
Description: BRIDGE RECT 1P 800V 800MA 4TBS
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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Technische Details TB8S-G Comchip Technology
Description: BRIDGE RECT 1P 800V 800MA 4TBS, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA, Current - Average Rectified (Io): 800 mA, Voltage - Peak Reverse (Max): 800 V, Supplier Device Package: TBS, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Surface Mount, Package / Case: 4-SMD, Gull Wing, Packaging: Tape & Reel (TR).
Weitere Produktangebote TB8S-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TB8S-G | Hersteller : Comchip Technology |
Bridge Rectifiers VR=800V IF(AV)=1A |
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