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TC58CVG0S3HRAIG

TC58CVG0S3HRAIG Toshiba Memory

Toshiba%20Memory%20America%20Inc_10242017_TC58CVG0S3HxAI-1218038.pdf
Hersteller: Toshiba Memory
NAND Flash 3.3V 1Gb 24nm Serial NAND
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Technische Details TC58CVG0S3HRAIG Toshiba Memory

Description: IC FLASH 1GBIT SPI 104MHZ 8WSON, Packaging: Tray, Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND (SLC), Clock Frequency: 104 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Memory Interface: SPI, Access Time: 155 µs, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.

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TC58CVG0S3HRAIG TC58CVG0S3HRAIG Kioxia America, Inc. KIOXIA_TC58CVG0S3HRAIG_Rev2.0_E191001.pdf Description: IC FLASH 1GBIT SPI 104MHZ 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI
Access Time: 155 µs
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC58CVG0S3HRAIG KIOXIA_TC58CVG0S3HRAIG_Rev2.0_E191001.pdf
TC58CVG0S3HRAIG
Hersteller: Kioxia America, Inc.
Description: IC FLASH 1GBIT SPI 104MHZ 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI
Access Time: 155 µs
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH